Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies
- N. Fuller
- M.A. Worsley
- et al.
- 2006
- IITC 2006
Conference paper
Publications
5 results for M. Sankar
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paperPorous ILD process development for sub 100nm integration
- K. Malone
- S.T. Chen
- et al.
- 2003
- ADMETA 2003
Conference paper