32 NM Logic patterning options with immersion lithography
- K. Lai
- S. Burns
- et al.
- 2008
- SPIE Advanced Lithography 2008
Conference paper
Publications
5 results for L. Tsou
Patterning strategies for gate level tip-tip distance reduction in SRAM cell for 45nm and beyond
- Haoren Zhuang
- Helen Wang
- et al.
- 2007
- ISTC 2007
Conference paperHigh performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Conference paperTrimming of hard-masks by gaseous chemical oxide removal (COR) for sub-10nm gates/fins, for gate length control and for embedded logic
- Wesley C. Natzle
- David Horak
- et al.
- 2004
- ASMC 2004
Conference paperA high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Conference paper