Design and manufacturability aspect of SOI CMOS RFICs
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2004
- CICC 2004
Conference paper
Publications
36 results for Jonghae Kim
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
Conference paperA 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
PaperA low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology
- Neric Fong
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
PaperHighly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IEDM 2003
Conference paperA Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
Conference paperA 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
Conference paper3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
Conference paperA 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
Conference paperA 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
Conference paper