A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
Conference paper
Publications
4 results for M. Dahlström
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
Conference paperA BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
Conference paperSiGe HBT BiCMOS technology for millimeter-wave applications
- Alvin Joseph
- Mattias Dahlstrom
- et al.
- 2005
- ISCS 2005
Conference paper