Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
- Bruce Doris
- Kangguo Cheng
- et al.
- 2013
- VLSI-TSA 2013
Conference paper
Publications
45 results for Kangguo Cheng
Development of KrF hybrid resist for a dual isolation application
- Sen Liu
- Steven Holmes
- et al.
- 2013
- SPIE Advanced Lithography 2013
Conference paperEvaluation of sSOI wafers for 22nm node and beyond
- F. Allibert
- Kangguo Cheng
- et al.
- 2012
- S3S 2012
Conference paperAdvanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology
- Davood Shahrjerdi
- Stephen W. Bedell
- et al.
- 2012
- IEDM 2012
Conference paperStrain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
Conference paperScalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
PaperThe future of SOI transistor technology
- Bruce Doris
- Ali Khakifirooz
- et al.
- 2011
- IEEE International SOI Conference 2011
Conference paperAssessment of fully-depleted planar CMOS for low power complex circuit operation
- Zhibin Ren
- S. Mehta
- et al.
- 2011
- IEDM 2011
Conference paperImpact of substrate bias on GIDL for thin-BOX ETSOI devices
- Pranita Kulkarni
- Q. Liu
- et al.
- 2011
- SISPAD 2011
Conference paperETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Conference paper