Comprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Conference paper
Publications
169 results for James Stathis
Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Conference paperApplications of clustering model to bimodal distributions for dielectric breakdown
- Ernest Y. Wu
- Ronald Bolam
- et al.
- 2017
- JVSTB
PaperFundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications
- Ernest Y. Wu
- James Stathis
- et al.
- 2016
- IRPS 2016
Conference paperProcess optimizations for NBTI/PBTI for future replacement metal gate technologies
- Barry P. Linder
- A. Dasgupta
- et al.
- 2016
- IRPS 2016
Conference paperFINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Conference paperLow-κ and High-κ breakdown statistics with variability: Clustering model versus reconstruction methodology (Invited)
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2015
- IPFA 2015
Conference paperA novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Conference paperSeparation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
- Miaomiao Wang
- Zuoguang Liu
- et al.
- 2015
- IRPS 2015
Conference paperA critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)
- Ernest Y. Wu
- James Stathis
- et al.
- 2015
- IRPS 2015
Conference paper