The dielectric breakdown in gate oxides under high field stress
- S. Lombardo
- J.H. Stathis
- et al.
- 2009
- ECS Meeting 2009
Conference paper
Publications
169 results for James Stathis
A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
Conference paperA novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
PaperHigh-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Conference paperWorn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
PaperInfluence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
PaperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paperGate oxide reliability for nano-scale CMOS
- J.H. Stathis
- 2006
- MIEL 2006
Conference paperHybrid-orientation technology (HOT): Opportunities and challenges
- Min Yang
- Victor W.C. Chan
- et al.
- 2006
- IEEE Transactions on Electron Devices
ReviewThe negative bias temperature instability in MOS devices: A review
- J.H. Stathis
- S. Zafar
- 2006
- Microelectronics Reliability
Paper