Dielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
Review
Publications
169 results for James Stathis
Gate oxide reliability for nano-scale CMOS
- James H. Stathis
- 2005
- IPFA 2005
Conference paperA comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Conference paperA study of negative bias temperature instability (NBTI) in pFETs
- Sufi Zafar
- James Stathis
- et al.
- 2005
- ECS Meeting 2005
Conference paperCharge trapping & NBTI in high k gate dieectric stacks
- Sufi Zafar
- A.C. Callegari
- et al.
- 2005
- ECS Meeting 2005
Conference paperInterface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
- J.H. Stathis
- R. Bolam
- et al.
- 2005
- INFOS 2005
Conference paperImpact of ultra thin oxide breakdown on circuits
- James H. Stathis
- 2005
- ICICDT 2005
Conference paperA model for negative bias temperature instability (NBTI) in oxide and high κ pFETs
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- VLSI Technology 2004
Conference paperBreakdown transients in ultra-thin gate oxynitrides
- S. Lombarde
- F. Palumbo
- et al.
- 2004
- ICICDT 2004
Conference paperBroad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
- J.H. Stathis
- G. LaRosa
- et al.
- 2004
- IRPS 2004
Conference paper