Dielectric breakdown mechanisms in gate oxides
- Salvatore Lombardo
- James H. Stathis
- et al.
- 2005
- Journal of Applied Physics
Review
Publications
96 results for Barry P. Linder
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Conference paperOptimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Conference paperOn the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks
- Kingsuk Maitra
- Barry P. Linder
- et al.
- 2005
- PRiME/ECS Meeting 2005
Conference paperHigh performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005
Conference paperSystematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
Conference paperPoly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Conference paperUltra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
- B.P. Linder
- et al.
- 2005
- VLSI-TSA 2005
Conference paperAdvanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Conference paperSystematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Conference paper