Breakdown transients in ultra-thin gate oxynitrides
- S. Lombarde
- F. Palumbo
- et al.
- 2004
- ICICDT 2004
Conference paper
Publications
96 results for Barry P. Linder
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004
Conference paperCharacterization of breakdown in ultrathin oxides by hot carrier emission
- J.C. Tsang
- B.P. Linder
- 2004
- Applied Physics Letters
PaperStatistics of progressive breakdown in ultra-thin oxides
- B.P. Linder
- J.H. Stathis
- 2003
- INFOS 2003
Conference paperEffect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Conference paperCritical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxides
- E. Wu
- J. Suñé
- et al.
- 2003
- IEDM 2003
Conference paperReliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Conference paperInfluence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Conference paperCircuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Conference paperGrowth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paper