Formation of β-SiC nanocrystals by the relaxation of Si 1-yCy random alloy layers
- A.R. Powell
- F. Legoues
- et al.
- 1994
- Applied Physics Letters
Paper
Publications
124 results for Subramanian S. Iyer
Interfacial microstructures of ultrathin Ge layers on Si probed by x-ray scattering and fluorescence yield
- Z.H. Ming
- Y.L. Soo
- et al.
- 1994
- Applied Physics Letters
PaperGe segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
PaperSimilarities between the Landau spectra and dispersion relations in Si/Si1-xGex quantum wells investigated by magnetotunneling spectroscopy
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperInfluence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Journal of Electronic Materials
PaperWittmer et al. reply
- M. Wittmer
- P. Fahey
- et al.
- 1993
- Physical Review Letters
PaperAn ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
Conference paperAtomic layer doping for Si
- D.A. Grützmacher
- K. Eberl
- et al.
- 1993
- Thin Solid Films
PaperCrystallization process of amorphous mixed SixGe1-x thin films
- M. Bendayan
- R. Beserman
- et al.
- 1993
- Applied Surface Science
PaperCross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices
- E.T. Yu
- M. Johnson
- et al.
- 1993
- Journal of Crystal Growth
Paper