Publications

18 results for Kevin Chan

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Conference paper
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014
Conference paper
On the device design and drive-current capability of SOI lateral bipolar transistors
- - Jin Cai
  - Tak H. Ning
  - et al.
- 2014
- IEEE J-EDS
Paper
SOI lateral bipolar transistor with drive current >3mA/μm
- - J. Cai
  - Tak H. Ning
  - et al.
- 2013
- S3S 2013
Conference paper
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Circuits 2013
Conference paper
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Technology 2013
Conference paper
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- - Q. Liu
  - Jim Adkisson
  - et al.
- 2012
- ECS Meeting 2012
Conference paper
Complementary thin-base symmetric lateral bipolar transistors on SOI
- - Jin Cai
  - Tak H. Ning
  - et al.
- 2011
- IEDM 2011
Conference paper