10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014
Conference paper
Publications
16 results for G. Tsutsui
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
- Q. Liu
- M. Vinet
- et al.
- 2013
- IEDM 2013
Conference paperComprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
- Abhijeet Paul
- Andres Bryant
- et al.
- 2013
- IEDM 2013
Conference paperFin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs
- Abhijeet Paul
- Chun-Chen Yeh
- et al.
- 2013
- S3S 2013
Conference paperAggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
Conference paperNovel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics
Paper