Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- Carlos Navarro
- Siegfried Karg
- et al.
- 2019
- Nature Electronics
Paper
Publications
28 results for Clarissa Convertino
High-performance InGaAs FinFETs with raised source/drain extensions
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- Japanese Journal of Applied Physics
PaperHigh-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- IEEE Electron Device Letters
PaperReplacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- EUROSOI-ULIS 2019
Conference paperEffects of Post Metallization Annealing on InGaAs-on-Insulator MOSFETs on Si
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- EUROSOI-ULIS 2019
Conference paperHigh Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- IEDM 2018
Conference paperInGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
Conference paperInGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS with Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- IEEE J-EDS
PaperFacet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Mattias Borg
- Lynne Gignac
- et al.
- 2018
- Nanotechnology
PaperInGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
Paper