An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Conference paper
Publications
106 results for Lukas Czornomaz
Optical nonlinear barium titanate thin films integrated in silicon photonic devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2015
- CLEO/Europe-EQEC 2015
Conference paperTri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors
- V. Djara
- Lukas Czornomaz
- et al.
- 2015
- EUROSOI-ULIS 2015
Conference paperAdvanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Conference paperWafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- ISSWB 2014
Conference paperTowards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
PaperUltra-thin-body self-aligned InGaAs MOSFETs on insulator (III-V-O-I) by a tight-pitch process
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2014
- DRC 2014
Conference paperIII/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014
Conference paperCo-integrating high mobility channels for future CMOS, from substrate to circuits
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- IPRM 2014
Conference paperStrain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
- Christophe Rossel
- P. Weigele
- et al.
- 2014
- Solid-State Electronics
Paper