High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- IEEE Electron Device Letters
Paper
Publications
43 results for C. B. Zota
Effects of Post Metallization Annealing on InGaAs-on-Insulator MOSFETs on Si
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- EUROSOI-ULIS 2019
Conference paperReplacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- EUROSOI-ULIS 2019
Conference paperInGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
Conference paperHigh Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- IEDM 2018
Conference paperInGaAs FinFETs 3-D Sequentially Integrated on FDSOI Si CMOS with Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2019
- IEEE J-EDS
PaperInGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- Materials
PaperScaling without scaling: A paradigm shift in the semiconductor industry
- C. B. Zota
- Lukas Czornomaz
- et al.
- 2018
- Europhysics News
PaperInGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- VLSI Technology 2018
Conference paperInGaAs FinFETs 3D sequentially integrated on FDSOI Si CMOS with record perfomance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- ESSDERC 2018
Conference paper