Low density of states at the epitaxial CaF2-Si(111) interface
- M. Dähne-Prietsch
- I. Manke
- et al.
- 1999
- Journal of Physics D: Applied Physics
Paper
Publications
10 results for H.J. Wen
Quantum interference in SiO2: A conduction-band mass reappraisal
- R. Ludeke
- H.J. Wen
- et al.
- 1998
- Applied Physics Letters
PaperLocalized degradation studies of ultrathin gate oxides
- H.J. Wen
- R. Ludeke
- 1998
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperCurrent oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy
- H.J. Wen
- R. Ludeke
- et al.
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperAtomic-scale studies of electron transport through MOS structures
- H.J. Wen
- R. Ludeke
- et al.
- 1998
- Applied Surface Science
PaperLocalized electron trapping and trap distributions in SiO2 gate oxides
- R. Ludeke
- H.J. Wen
- 1997
- Applied Physics Letters
PaperInvestigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopy
- H.J. Wen
- R. Ludeke
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperImage force effects and the dielectric response of SiO2 in electron transport across metal-oxide-semiconductor structures
- H.J. Wen
- R. Ludeke
- et al.
- 1997
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperGate oxide characterization with ballistic electron emission microscopy
- R. Ludeke
- H.J. Wen
- 1997
- Microelectronic Engineering
PaperStressing and high field transport studies on device-grade SiO2 by ballistic electron emission spectroscopy
- R. Ludeke
- H.J. Wen
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper