Non-self-limiting nature of silicon reduction of WF6 in cold wall systems
- R.V. Joshi
- V. Prasad
- et al.
- 1992
- Journal of Applied Physics
Paper
Publications
216 results for Rajiv V. Joshi
Collimated sputtering of TiN/Ti liners into sub-half-micrometer high aspect ratio contacts/lines
- R.V. Joshi
- S.B. Brodsky
- 1992
- Applied Physics Letters
PaperDiffusion of dopants in tungsten disilicide: effects of diffusion paths
- O. Thomas
- G. Scilla
- et al.
- 1991
- Applied Surface Science
PaperA novel application of polyimide-W-AI/CU for VLSI interconnect
- R.V. Joshi
- L. Hsu
- et al.
- 1991
- VMIC 1991
Conference paperA 2-ns Cycle, 3.8-ns Access 512-kb CMOS ECL SRAM with a Fully Pipelined Architecture
- Terry I. Chappell
- Barbara A. Chappell
- et al.
- 1991
- IEEE Journal of Solid-State Circuits
PaperMechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W
- R.V. Joshi
- V. Prasad
- et al.
- 1990
- Journal of Applied Physics
PaperSurface reactions in the chemical vapor deposition of tungsten using WF6 and SiH4 on Al, PtSi, and TiN
- Ming L. Yu
- Kie Y. Ahn
- et al.
- 1990
- Journal of Applied Physics
PaperSurface chemistry of the WF6-based chemical vapor deposition of tungsten
- M.L. Yu
- K.Y. Ahn
- et al.
- 1990
- IBM J. Res. Dev
PaperNovel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections
- R.V. Joshi
- D. Moy
- et al.
- 1989
- Applied Physics Letters
PaperLow-resistance submicron CVD W interlevel via plugs on Al-Cu-Si
- R.V. Joshi
- S.B. Brodsky
- et al.
- 1989
- VMIC 1989
Conference paper