First demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- VLSI Technology 2016
Conference paper
Publications
158 results for Jean Fompeyrine
Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots
- Yang Zhang
- Yan Chen
- et al.
- 2016
- Nano Letters
PaperLow-Loss BaTiO3-Si Waveguides for Nonlinear Integrated Photonics
- Felix Eltes
- Daniele Caimi
- et al.
- 2016
- ACS Photonics
PaperTheoretical and experimental analysis of capacitance and mobility in InGaAs
- F.M. Bufler
- M. Frey
- et al.
- 2016
- DRC 2016
Conference paperUpconversion photoluminescence of epitaxial Yb3+/Er3+ codoped ferroelectric Pb(Zr,Ti)O3 films on silicon substrates
- Yang Zhang
- Thomas Kämpfe
- et al.
- 2016
- Thin Solid Films
PaperFabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperFirst RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Conference paperCMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
PaperTri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
PaperHybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- SNW 2014
Conference paper