Effects of contact area on mechanical strength, electrical resistance, and electromigration reliability of Cu/Low- k interconnects
- C.-C. Yang
- T.M. Shaw
- et al.
- 2010
- Electrochemical and Solid-State Letters
Paper
Publications
64 results for Andrew Simon
Effect of TaN stoichiometry on barrier oxidation and defect density in 32nm Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder Baumann
- et al.
- 2010
- MRS Online Proceedings Library
Conference paperIonized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Conference paperMaterial and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Conference paperExtendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects
- Andrew H. Simon
- Tibor Bolom
- et al.
- 2008
- MRS Spring Meeting 2008
Conference paperComparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES
PaperA 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Conference paperHigh performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Conference paperLower resistance scaled metal contacts to silicide for advanced CMOS
- A. Topol
- C. Sheraw
- et al.
- 2006
- VLSI Technology 2006
Conference paperPhysical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
Conference paper