Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Conference paper
Publications
62 results for A. Ray
The Formation of SiO2 in an RF Generated Oxygen Plasma: II. The Pressure Range Above 10 mTorr
- A. Ray
- A. Reisman
- 2019
- JES
PaperThe Formation of SiO2 in an RF Generated Oxygen Plasma: I. The Pressure Range Below 10 mTorr
- A. Ray
- A. Reisman
- 2019
- JES
PaperPlasma Oxide FET Devices
- A. Ray
- A. Reisman
- 2019
- JES
PaperAnomalous Etch Structures Using Ethylenediamine-Pyrocatechol-Water Based Etchants and Their Elimination
- A. Reisman
- M. Berkenblit
- et al.
- 2019
- JES
PaperThe Defect Structure of Pure and Doped ZnSe
- A. Ray
- F.A. Kröger
- 2019
- JES
PaperThe Defect Structure of ZnSe:Ga
- A. Ray
- F.A. Kröger
- 2019
- JES
PaperOn the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure
- A. Reisman
- J.M. Aitken
- et al.
- 2019
- JES
PaperSuperb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memory
- N. Gang
- W. Chien
- et al.
- 2019
- IMW 2019
Conference paperSolution for PCM and OTS intermixing on cross-point phase change memory
- W. Chien
- Lynne Gignac
- et al.
- 2019
- IMW 2019
Conference paper