A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2018
- Journal of Applied Physics
Paper
Publications
55 results for Pouya Hashemi
First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions
- Pouya Hashemi
- Jeng-Bang Yau
- et al.
- 2017
- S3S 2017
Conference paperKey parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
Conference paperHigh performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- IEDM 2017
Conference paperDemonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions
- Pouya Hashemi
- Jeng-Bang Yau
- et al.
- 2017
- IEEE J-EDS
PaperHigh performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Conference paperHigh performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Conference paperHigh performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Conference paperThree-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
- Veeresh Deshpande
- Vladimir Djara
- et al.
- 2017
- Japanese Journal of Applied Physics
PaperHigh Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
Paper