Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration
- Jin-Hong Park
- Munehiro Tada
- et al.
- 2009
- Journal of Applied Physics
Paper
Publications
114 results for H.-S. Philip Wong
Measurement of subnanosecond delay through multiwall carbon-nanotube local interconnects in a CMOS integrated circuit
- Gael F. Close
- Shinichi Yasuda
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperCrystallization times of Ge-Te phase change materials as a function of composition
- S. Raoux
- H.Y. Cheng
- et al.
- 2009
- Applied Physics Letters
PaperMeasuring frequency response of a single-walled carbon nanotube common-source amplifier
- Islamshah Amlani
- King F. Lee
- et al.
- 2009
- IEEE TNANO
PaperSelective device structure scaling and parasitics engineering: A way to extend the technology roadmap
- Lan Wei
- Jie Deng
- et al.
- 2009
- IEEE Transactions on Electron Devices
PaperPhase change nanodots patterning using a self-assembled polymer lithography and crystallization analysis
- Yuan Zhang
- Simone Raoux
- et al.
- 2008
- Journal of Applied Physics
PaperDesign methods for misaligned and mispositioned carbon-nanotube immune circuits
- Nishant Patil
- Jie Deng
- et al.
- 2008
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
PaperAn analytical model for intrinsic carbon nanotube FETs
- Lan Wei
- David J. Frank
- et al.
- 2008
- ESSDERC 2008
Conference paperIntegrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis
- SangBum Kim
- Yuan Zhang
- et al.
- 2008
- IEEE Transactions on Electron Devices
PaperFinite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
- Dimitrios Tsamados
- Yogesh Singh Chauhan
- et al.
- 2008
- Solid-State Electronics
Paper