Is selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Conference paper
Publications
204 results for Christian Lavoie
Templating Effects On C54-Tisi2 Formation In Ternary Reactions.
- A. Quintero
- M. Libera
- et al.
- 1998
- Microscopy and Microanalysis
Conference paperIs selective CVD an improvement for the titanium silicide process in sub-quarter micron technology? A phase formation study using x-ray diffraction
- R.A. Roy
- Cryil Cabral Jr.
- et al.
- 1998
- MRS Spring Meeting 1998
Conference paperLow temperature formation of C54-TiSi2 using titanium alloys
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Applied Physics Letters
PaperSurface roughening during titanium silicide formation: A comparison between Si(100) and poly-Si substrates
- C. Lavoie
- R. Martel
- et al.
- 1996
- MRS Fall Meeting 1996
Conference paperIn situ detection of misfit dislocations by light scattering
- K.L. Kavanagh
- R.S. Goldman
- et al.
- 1997
- Journal of Crystal Growth
PaperPhase formation sequences in the silicon-phosphorus system: Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model
- J.R.A. Carlsson
- L. Clevenger
- et al.
- 1997
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
PaperCrystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry
- V. Svilan
- K.P. Rodbell
- et al.
- 1997
- Journal of Electronic Materials
PaperEffect of growth conditions on surface roughening of relaxed InGaAs on GaAs
- T. Pinnington
- C. Lavoie
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperIn situ TEM analysis of TiSi2 C49-C54 transformations during annealing
- L. Gignac
- V. Svilan
- et al.
- 1996
- MRS Fall Meeting 1996
Conference paper