Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs beyond 7nm
- Heng Wu
- Oleg Gluschenkov
- et al.
- 2018
- IEDM 2018
Conference paper
Publications
204 results for Christian Lavoie
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
Conference paperAxiotaxy and epitaxial textures in C54-TiSi2 films on Si(0 0 1) and Si(1 1 1) substrates
- F.A. Geenen
- Jean L. Jordan-Sweet
- et al.
- 2018
- Journal of Physics D: Applied Physics
PaperThe influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture
- F.A. Geenen
- E. Solano
- et al.
- 2018
- Journal of Applied Physics
PaperControlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration
- F.A. Geenen
- K. Van Stiphout
- et al.
- 2018
- Journal of Applied Physics
PaperHighly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
Conference paperResistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2
- Adam Pyzyna
- Hsinyu Tsai
- et al.
- 2017
- IITC 2017
Conference paperImpact of laser anneal on NiPt silicide texture and chemical composition
- C. Feautrier
- Ahmet S. Ozcan
- et al.
- 2017
- Journal of Applied Physics
PaperContacts in advanced CMOS: History and emerging challenges
- Christian Lavoie
- Praneet Adusumilli
- et al.
- 2017
- ECS Meeting 2017 - New Orleans
Conference paperElectronic and structural analysis of ultra-small-diameter metal disilicide nanowires
- Nicholas A. Lanzillo
- T. Standaert
- et al.
- 2017
- Journal of Applied Physics
Paper