Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
- Sonal Dey
- Kai-Hung Yu
- et al.
- 2017
- JVSTA
Paper
Publications
204 results for Christian Lavoie
Formation of nickel germanides from Ni layers with thickness below 10 nm
- Lukas Jablonka
- Tomas Kubart
- et al.
- 2017
- JVSTB
PaperTexture in thin film silicides and germanides: A review
- B. De Schutter
- K. De Keyser
- et al.
- 2016
- Applied Physics Reviews
ReviewFormation and microstructure of thin Ti silicide films for advanced technologies
- Praneet Adusumilli
- A. Carr
- et al.
- 2016
- IITC/AMC 2016
Conference paperGas cluster ion beam assisted NiPt germano-silicide formation on SiGe
- Ahmet S. Ozcan
- Christian Lavoie
- et al.
- 2016
- Journal of Applied Physics
PaperPhase formation and texture of thin nickel germanides on Ge(001) and Ge(111)
- B. De Schutter
- K. Van Stiphout
- et al.
- 2016
- Journal of Applied Physics
PaperInfluence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates
- F.A. Geenen
- K. Van Stiphout
- et al.
- 2015
- IITC/MAM 2015
Conference paperResistivity of copper interconnects beyond the 7 nm node
- Adam Pyzyna
- Robert L. Bruce
- et al.
- 2015
- VLSI Technology 2015
Conference paperChallenges of nickel silicidation in CMOS technologies
- Nicolas Breil
- Christian Lavoie
- et al.
- 2015
- Microelectronic Engineering
PaperCompositional dependence of the optical conductivity of Ni1 - XPtx alloys (0 < x < 0.25) determined by spectroscopic ellipsometry
- Lina S. Abdallah
- Stefan Zollner
- et al.
- 2014
- Thin Solid Films
Paper