Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
Conference paper
Publications
204 results for Christian Lavoie
Accurate method of measuring specific contact resistivity of interface between silicide and silicon and its application
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2012
- Japanese Journal of Applied Physics
PaperThe thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation
- Simon Gaudet
- Patrick Desjardins
- et al.
- 2011
- Journal of Applied Physics
PaperLeakage and contact resistance reduction by diffusion of dopants in NiPt suicide
- Ahmet Ozcan
- Ming Cai
- et al.
- 2011
- ADMETA 2011
Conference paperMetal-catalyzed graphitization in Ni-C alloys and amorphous-C/Ni bilayers
- Katherine L. Saenger
- Christian Lavoie
- et al.
- 2010
- MRS Fall Meeting 2010
Conference paperA 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Conference paperEpitaxy of ultrathin NiSi2 films with predetermined thickness
- Xindong Gao
- Joakim Andersson
- et al.
- 2011
- Electrochemical and Solid-State Letters
PaperPhase formation and texture of nickel silicides on Si1-xC x epilayers
- K. De Keyser
- B. De Schutter
- et al.
- 2011
- Microelectronic Engineering
PaperExploitation of a self-limiting process for reproducible formation of ultrathin Ni1-x Ptx silicide films
- Zhen Zhang
- Bin Yang
- et al.
- 2010
- Applied Physics Letters
PaperTexture of CoSi2 films on Si(111), (110) and (001) substrates
- K. De Keyser
- C. Detavernier
- et al.
- 2010
- Thin Solid Films
Paper