Phase formation and stability of Ni silicide contacts - Scaling to ultra-thin films
- C. Detavernier
- K. De Keyser
- et al.
- 2010
- ICSICT 2010
Conference paper
Publications
204 results for Christian Lavoie
Formation of nickel silicide from direct-liquid-injection chemical-vapor-deposited nickel nitride films
- Zhefeng Li
- Roy G. Gordon
- et al.
- 2010
- JES
PaperEffective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Conference paperSharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
PaperMetastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance
- Simon Gaudet
- C. Coia
- et al.
- 2010
- Journal of Applied Physics
PaperPhase formation and thermal stability of ultrathin nickel-silicides on Si(100)
- K. De Keyser
- C. Van Bockstael
- et al.
- 2010
- Applied Physics Letters
PaperIn situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers
- Katherine Saenger
- James C. Tsang
- et al.
- 2010
- Applied Physics Letters
PaperHigh-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
PaperTexture of cobalt germanides on Ge(100) and Ge(111) and its influence on the formation temperature
- K. De Keyser
- R.L. Van Meirhaeghe
- et al.
- 2010
- JES
PaperIn situ study of the formation of silicide phases in amorphous Co-Si mixed layers
- C. Van Bockstael
- K. De Keyser
- et al.
- 2010
- Microelectronic Engineering
Paper