Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2013
- SPIE Advanced Lithography 2013
Conference paper
Publications
43 results for David P. Klaus
Pattern transfer of directed self-assembly patterns for CMOS device applications
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2013
- J. Micro/Nanolithogr. MEMS MOEMS
PaperPatterning of CMOS device structures for 40-80nm pitches and beyond
- Sebastian U. Engelmann
- R.M. Martin
- et al.
- 2012
- SPIE Advanced Lithography 2012
Conference paperSub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
- Hsin-Yu Tsai
- Hiroyuki Miyazoe
- et al.
- 2012
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
PaperPattern collapse mitigation strategies for EUV Lithography
- Dario L. Goldfarb
- Robert L. Bruce
- et al.
- 2012
- SPIE Advanced Lithography 2012
Conference paperA 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Conference paperEffective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Conference paperGate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
- Sarunya Bangsaruntip
- A. Majumdar
- et al.
- 2010
- VLSI Technology 2010
Conference paperSharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
PaperHigh-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Paper