A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolarG. ShahidiJ. Warnocket al.1992VLSI Technology 1992Conference paper
On the preparation of cross-sectional TEM samples using lithographic processing and reactive ion-etchingJ.T. WetzelM. Jostet al.1989UltramicroscopyPaper
REACTIVE ION ETCHING OF MULTI-LAYER RESIST.H.Y. NgD.P. Klauset al.1986MRS Fall Meeting 1986Conference paper