Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layerA.C. CallegariP. Jamisonet al.2006Journal of Applied PhysicsPaper
Disproving a silicon analog of an alkyne with the aid of topological analyses of the electronic structure and ab initio molecular dynamics calculationsCarlo A. PignedoliAlessandro Curioniet al.2005ChemPhysChemPaper
Interface engineering for enhanced electron mobilities in W/HfO 2 gate stacksA.C. CallegariP. Jamisonet al.2004IEDM 2004Conference paper