Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Conference paper
Publications
123 results for Tak H. Ning
Thermal reemission of trapped electrons in SiO2
- T.H. Ning
- 2008
- Journal of Applied Physics
PaperElectron trapping in SiO2 due to electron-beam deposition of aluminum
- Tak H. Ning
- 2008
- Journal of Applied Physics
PaperUltra-low leakage silicon-on-insulator technology for 65 nm node and beyond
- Jin Cai
- Amlan Majumdar
- et al.
- 2007
- IEDM 2007
Conference paperFuture directions for CMOS device technology development from a system application perspective
- Tak H. Ning
- 2007
- SPIE Advanced Lithography 2007
Conference paperThe future of CMOS - Limits and opportunities
- Tak H. Ning
- 2007
- ECS Meeting 2007
Conference paperProton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
- Tianbing Chen
- Akil K. Sutton
- et al.
- 2005
- IEEE TNS
PaperSubstrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI
- Tianbing Chen
- Marco Bellini
- et al.
- 2005
- BCTM 2005
Conference paperA comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Conference paperReverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
Paper