Ruthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
Conference paper
Publications
28 results for Catherine Labelle
Plasma etch patterning of EUV lithography: Balancing roughness and selectivity trade off
- Sebastian U. Engelmann
- Qinghuang Lin
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperTrench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
- Yannick Feurprier
- Katie Lutker-Lee
- et al.
- 2015
- SPIE Advanced Lithography 2015
Conference paperPlasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL
- Changwoo Lee
- Bhaskar Nagabhirava
- et al.
- 2015
- SPIE Advanced Lithography 2015
Conference paperCompetitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
PaperPlasma etch challenges for porous low k materials for 32nm and beyond
- Catherine Labelle
- R. Srivastava
- et al.
- 2011
- CSTIC 2011
Conference paperCompetitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Conference paperPorous low-k material etch for 32 nm and beyond
- Catherine Labelle
- John Arnold
- et al.
- 2008
- ADMETA 2008
Conference paperPlasma ash processing solutions for advanced interconnect technology
- N. Fuller
- M.A. Worsley
- et al.
- 2008
- Thin Solid Films
PaperA 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Conference paper