65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paper
Publications
28 results for Catherine Labelle
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperNanoporous materials integration into advanced microprocessors
- E. Todd Ryan
- Cathy Labelle
- et al.
- 2005
- MRS Spring Meeting 2005
Conference paperHigh performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
- W.-H. Lee
- A. Waite
- et al.
- 2005
- IEDM 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paperPlasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
Conference paperLower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Conference paperAsh-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Conference paper