Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010
Conference paper
Publications
148 results for Thomas M. Shaw
Processing and moisture effects on TDDB for Cu/ULK BEOL structures
- Eric G. Liniger
- T.M. Shaw
- et al.
- 2010
- ADMETA 2010
Conference paperCoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Conference paperUltrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
Conference paperCVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Conference paperCharacterization of "ultrathin-Cu"/Ru(Ta)/TaN liner stack for copper interconnects
- C.-C. Yang
- S. Cohen
- et al.
- 2010
- IEEE Electron Device Letters
PaperEffects of contact area on mechanical strength, electrical resistance, and electromigration reliability of Cu/Low- k interconnects
- C.-C. Yang
- T.M. Shaw
- et al.
- 2010
- Electrochemical and Solid-State Letters
PaperStress relaxation in Cu thin films
- C. Witt
- R. Rosenberg
- et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008
Workshop paperReliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- R.R. Yu
- F. Liu
- et al.
- 2009
- VLSI Technology 2009
Conference paperOn the contribution of line-edge roughness to intralevel TDDB lifetime in low-k dielectrics
- J.R. Lloyd
- X.-H. Liu
- et al.
- 2009
- IRPS 2009
Conference paper