FDSOI CMOS with dielectrically-isolated back gates and 30nm LG high-κ/metal gate
- Marwan Khater
- J. Cai
- et al.
- 2010
- VLSI Technology 2010
Conference paper
Publications
79 results for Jin Cai
Ultra-thin-body and BOX (UTBB) Fully Depleted (FD) device integration for 22nm node and beyond
- Q. Liu
- A. Yagishita
- et al.
- 2010
- VLSI Technology 2010
Conference paperHigh-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
PaperAre Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Conference paperExperimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs
- P. Solomon
- S.E. Laux
- et al.
- 2009
- DRC 2009
Conference paperReduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Conference paperFDSOI CMOS with dual backgate control for performance and power modulation
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2009
- VLSI-TSA 2009
Conference paperLow power circuit design based on heterojunction tunneling transistors (HETTs)
- Daeyeon Kim
- Yoonmyung Lee
- et al.
- 2009
- ISLPED 2009
Conference paperSOI series MOSFET for embedded high voltage applications and soft-error immunity
- Jin Cai
- Tak Ning
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paperWill SOI have a life for the low-power market?
- Jin Cai
- Zhibin Ren
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paper