Off-state current and performance analysis for double-gate CMOS with non-self-aligned back gate
- Keunwoo Kim
- Hussein I. Hanafi
- et al.
- 2005
- IEEE Transactions on Electron Devices
Paper
Publications
79 results for Jin Cai
Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
PaperBipolar transistors on thin SOI: Concept, status and prospect
- Jin Cai
- Tak H. Ning
- 2004
- ICSICT 2004
Conference paperPerformance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paperComparison of large-scale layer-relaxation simulations with experiment
- K.W. Schwarz
- J. Cai
- et al.
- 2004
- Applied Physics Letters
PaperStrain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
PaperCompact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics
PaperInfluence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Conference paperDevice Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperVertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
Conference paper