Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology
- S. Reboh
- R. Coquand
- et al.
- 2018
- Applied Physics Letters
Paper
Publications
5 results for J.-L. Rouviere
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
- David Cooper
- N. Bernier
- et al.
- 2017
- Applied Physics Letters
PaperNanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography
- Yun-Yu Wang
- David Cooper
- et al.
- 2015
- Applied Physics Letters
PaperStrain mapping of Si devices with stress memorization processing
- Y.Y. Wang
- John Bruley
- et al.
- 2013
- Applied Physics Letters
PaperMapping active dopants in single silicon nanowires using off-axis electron holography
- Martien I. Den Hertog
- Heinz Schmid
- et al.
- 2009
- Nano Letters
Paper