Phase transitions in Ge-Sb phase change materials
- Simone Raoux
- Cyril Cabral
- et al.
- 2009
- Journal of Applied Physics
Paper
Publications
45 results for Anita Madan
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paperChannel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- J. Li
- A. Lamberti
- et al.
- 2008
- ECS Meeting 2008
Conference paperRecent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
Conference paperEffect of ion implantation and anneals on fully-strained SiC and SiC:P films using multiple characterization techniques
- A. Madan
- J. Li
- et al.
- 2008
- ECS Meeting 2008
Conference paperOn implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETs
- Zhibin Ren
- G. Pei
- et al.
- 2008
- VLSI Technology 2008
Conference paperHole transport in nanoscale p-type MOSFET SOI devices with high strain
- H. Nayfeh
- S.-J. Jeng
- et al.
- 2007
- DRC 2007
Conference paperStrained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Conference paperNovel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Conference paper65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paper