Recovery study of negative bias temperature instability
- Miaomiao Wang
- Sufi Zafar
- et al.
- 2009
- Microelectronic Engineering
Paper
Publications
59 results for Sufi Zafar
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
- Aditya Bansal
- Rahul Rao
- et al.
- 2009
- Microelectronics Reliability
PaperSpecificity of ligand binding to transport sites: Ca2+ binding to the Ca2+ transport ATPase and its dependence on H+ and Mg2+
- Sufi Zafar
- Arif Hussain
- et al.
- 2008
- Archives of Biochemistry and Biophysics
PaperHigh-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Conference paperA model for negative bias temperature instability in oxide and high κ pFETs
- Sufi Zafar
- 2007
- ICICDT 2007
Conference paperMaterials and process integration issues in metal gate/high-k stacks and their dependence on device performance
- A.C. Callegari
- K. Babich
- et al.
- 2007
- ECS Meeting 2007
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperPoly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Conference paperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paperThe negative bias temperature instability in MOS devices: A review
- J.H. Stathis
- S. Zafar
- 2006
- Microelectronics Reliability
Paper