Publications

46 results for Dae-Gyu Park

First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
Conference paper
Plasma post-oxidation for high mobility strained-Ge pFETs with aggressively scaled high-κ dielectrics
- - Winston Chern
  - Pouya Hashemi
  - et al.
- 2014
- ECSSMEQ 2014
Conference paper
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- ECSSMEQ 2014
Conference paper
CMOS-Compatible self-aligned In_0.53Ga_0.47As MOSFETs with gate lengths down to 30 nm
- - Amlan Majumdar
  - Yanning Sun
  - et al.
- 2014
- IEEE T-ED
Paper
Strained Si_1-xGe_x-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- VLSI Technology 2014
Conference paper
On the device design and drive-current capability of SOI lateral bipolar transistors
- - Jin Cai
  - Tak H. Ning
  - et al.
- 2014
- IEEE J-EDS
Paper
Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs
- - Karthik Balakrishnan
  - Pouya Hashemi
  - et al.
- 2014
- DRC 2014
Conference paper
Experimental study of gate-first finfet threshold-voltage mismatch
- - Qintao Zhang
  - Cindy Wang
  - et al.
- 2014
- IEEE T-ED
Paper
SOI lateral bipolar transistor with drive current >3mA/μm
- - J. Cai
  - Tak H. Ning
  - et al.
- 2013
- S3S 2013
Conference paper
High-performance Si_1-xGe_x channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- - P. Hashemi
  - M. Kobayashi
  - et al.
- 2013
- VLSI Circuits 2013
Conference paper