Technology viable DC performance elements for Si/SiGe channel CMOS FinFTTG. TsutsuiRuqiang Baoet al.2016IEDM 2016Conference paper
Mechanism of co liner as enhancement layer for Cu interconnect gap-fillM. HeX. Zhanget al.2013JESPaper
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentalsTakeshi NogamiC. Pennyet al.2012IEDM 2012Conference paper
Diffusion barrier properties of very thin TaN with high nitrogen concentrationS.M. RossnagelH. Kim2003Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresPaper