Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
Conference paper
Publications
76 results for Alejandro G. Schrott
Endurance improvement of Ge2Sb2Te5-based phase change memory
- Chieh-Fang Chen
- A.G. Schrott
- et al.
- 2009
- IMW 2009
Conference paperAtomic layer deposition of materials for phase-change memories
- Markku Leskelä
- Viljami Pore
- et al.
- 2009
- ECS Meeting 2009
Conference paperAtomic layer deposition of Ge2Sb2Te5 thin films
- Mikko Ritala
- Viljami Pore
- et al.
- 2009
- Microelectronic Engineering
PaperThe influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009
Conference paperHydrazine-based deposition route for device-quality CIGS films
- David B. Mitzi
- Min Yuan
- et al.
- 2009
- Thin Solid Films
PaperDynamic resistance - A metric for variability characterization of phase-change memory
- Bipin Rajendran
- Matt Breitwisch
- et al.
- 2009
- IEEE Electron Device Letters
PaperAnalytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
Conference paperSolution processing of CIGS absorber layers using a hydrazine-based approach
- David B. Mitzi
- Min Yuan
- et al.
- 2008
- PVSC 2008
Conference paperMechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Conference paper