Publications

2 results for Ajit Paranjpe

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
- - Ko-Tao Lee
  - Can Bayram
  - et al.
- 2017
- IEEE Electron Device Letters
Paper
Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(111) substrate
- - J. Perozek
  - H.-P. Lee
  - et al.
- 2017
- Journal of Physics D: Applied Physics
Paper