Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
Paper
Publications
103 results for Stephen W. Bedell
300 mm SGOI/strain-Si for high-performance CMOS
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- IEEE International SOI Conference 2004
Conference paperSelectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
Conference paperPerformance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paperSiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Conference paperA hydrogen pre-bake process for Si epitaxy on sige surface
- H. Chen
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Conference paperStrained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004
Conference paperObservation of stacking faults in strained Si layers
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
PaperQuick turnaround technique for highlighting defects in thin Si/SiGe bilayers
- S.W. Bedell
- D.K. Sadana
- et al.
- 2004
- Electrochemical and Solid-State Letters
PaperA survey of defects in strained Si layers
- S.W. Bedell
- H. Chen
- et al.
- 2004
- MRS Proceedings 2004
Conference paper