Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paper
Publications
149 results for John A. Ott
On the integration of CMOS with hybrid crystal orientations
- M. Yang
- V. Chan
- et al.
- 2004
- VLSI Technology 2004
Conference paperChannel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004
Conference paperStrain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
PaperCoulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot
- L.J. Klein
- K.A. Slinker
- et al.
- 2004
- Applied Physics Letters
PaperHigh-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Conference paperInfluence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Conference paperFabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Conference paperHigh Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperThreshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Conference paper