Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
Paper
Publications
97 results for Katherine Saenger
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Conference paperLaterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
Conference paperLaser interferometry: A measurement technique for diffusion studies in thin polymer films
- K.L. Saenger
- Ho-Ming Tong
- 2004
- Polymer Engineering & Science
PaperHigh-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Conference paperCrystallinity and wet etch behavior of HfO2 films grown by MOCVD
- Katherine L. Saenger
- Cyril Cabral Jr.
- et al.
- 2003
- MRS Proceedings 2003
Conference paper80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
PaperImplications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
Conference paperStatic frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
PaperBending‐beam study of water sorption by thin poly(methyl methacrylate) films
- Ho-Ming Tong
- K.L. Saenger
- 2003
- Journal of Applied Polymer Science
Paper