High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Conference paper
Publications
30 results for Judson R. Holt
Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs
- Amlan Majumdar
- Xinlin Wang
- et al.
- 2009
- IEEE Electron Device Letters
PaperHigh-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paperChannel Strain Characterization in Embedded SiGe by Nano-beam Diffraction
- J. Li
- A. Lamberti
- et al.
- 2008
- ECS Meeting 2008
Conference paperHigh-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters
Paper(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Conference paperHole transport in nanoscale p-type MOSFET SOI devices with high strain
- H. Nayfeh
- S.-J. Jeng
- et al.
- 2007
- DRC 2007
Conference paperHigh performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007
Conference paperIntegration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Conference paperNovel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices
- J.-P. Han
- H. Utomo
- et al.
- 2006
- IEDM 2006
Conference paper