Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics
Paper
Publications
22 results for Leo Tai
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Conference paperComparative study of CVD TiN vs. ALD TiN for contact metallization in 32nm node and beyond
- Valli Arunachalam
- Filippos Papadatos
- et al.
- 2010
- ADMETA 2010
Conference paperHigh reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Conference paperCVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Conference paperDual damascene reactive ion etch polymer characterization through x-ray photoelectron spectroscopy for 65 nm and 45nm technology nodes
- Samuel S. Choi
- Chet Dziobkowski
- et al.
- 2009
- MRS Spring Meeting 2009
Conference paperPlasma ash processing solutions for advanced interconnect technology
- N. Fuller
- M.A. Worsley
- et al.
- 2008
- Thin Solid Films
PaperPECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paper65nm CMOS technology for low power applications
- A. Steegen
- R. Mo
- et al.
- 2005
- IEDM 2005
Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Conference paper