A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paper
Publications
17 results for Stuart Sieg
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Conference paperAdvanced in-line metrology strategy for self-aligned quadruple patterning
- Robin Chao
- Mary Breton
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperAssessments of image-based and scatterometry-based overlay targets
- Chiew-Seng Koay
- Nelson Felix
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperDSA patterning options for FinFET formation at 7nm node
- Chi Chun Liu
- Elliott Franke
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperEUV patterning successes and frontiers
- Nelson Felix
- Daniel Corliss
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperUV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes
- Y.C. Ee
- D. Kioussis
- et al.
- 2009
- ADMETA 2009
Conference paper